Descrição do Produto
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
Current Transfer Ratio 100% Minimum @ Specified Conditions
Guaranteed Switching Speeds
Meets or Exceeds all JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix V must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
Regulation Feedback Circuits
Monitor & Detection Circuits
Solid State Relays
Current Transfer Ratio 100% Minimum @ Specified Conditions
Guaranteed Switching Speeds
Meets or Exceeds all JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix V must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
Regulation Feedback Circuits
Monitor & Detection Circuits
Solid State Relays